 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4338 2N4339 2N4340 2N4341 VGS(off) (V) -0.3 to -1 -0.6 to -1.8 -1 to -3 -2 to -6 V(BR)GSS Min (V) -50 -50 -50 -50 gfs Min (mS) 0.6 0.8 1.3 2 IDSS Max (mA) 0.6 1.5 3.6 9 FEATURES D D D D Low Cutoff Voltage: 2N4338 <1 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet. TO-206AA (TO-18) S 1 2 D Top View 3 G and Case ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 175_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C For applications information see AN102 and AN106. Document Number: 70240 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4338 2N4339 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb Symbol Test Conditions Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V, VGS = -5 V IG = 1 mA , VDS = 0 V -57 -50 -0.3 0.2 -1 0.6 -100 -100 -50 -0.6 0.5 -1.8 1.5 -100 -100 V mA pA nA pA V -2 -4 -2 2 0.7 Drain Cutoff Current Gate-Source Forward Voltagec 50 50 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss en NF VDS = 10 V, VGS = 0 V, f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1.5 6 1 1 3 3 nV Hz dB VDS = 0 V, VGS = 0 V, f = 1 kHz 5 5 2500 7 15 1700 7 pF mS W 0.6 1.8 0.8 2.4 mS SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 2N4341 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb Symbol Test Conditions Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VGS = -5 V VDS = 15 V -57 -50 -1 1.2 -3 3.6 -100 -100 -50 -2 3 V -6 9 -100 -100 mA pA nA -2 -4 -2 2 3 0.7 50 70 pA Drain Cutoff Current Gate-Source Forward Voltage VGS = -10 V IG = 1 mA , VDS = 0 V V www.vishay.com 7-2 Document Number: 70240 S-04028--Rev. E, 04-Jun-01 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 2N4341 Parameter Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure Symbol Test Conditions Typa Min Max Min Max Unit gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss en NF VDS = 10 V, VGS = 0 V, f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1.5 6 VDS = 0 V, VGS = 0 V, f = 1 kHz 5 1.3 3 30 1500 7 3 2 4 60 800 7 mS mS W pF 3 nV Hz 1 1 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC. NPA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 10 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 5 gfs - Forward Transconductance (mS) 10 nA ID = 100 mA 1 nA IG - Gate Leakage (A) TA = 125_C 500 mA Gate Leakage Current IDSS - Saturation Drain Current (mA) 8 4 6 gfs 4 IDSS 3 100 pA IGSS @ 125_C 500 mA 2 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 2 1 0 0 -1 -2 -3 -4 -5 0 0.1 pA 0 6 12 18 24 30 VGS(off) - Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V) Document Number: 70240 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-3 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 1500 rDS(on) - Drain-Source On-Resistance ( ) 10 2 VGS(off) = -1.5 V 1200 gos gfs - Forward Transconductance (mS) gos - Output Conductance (S) 8 1.6 TA = -55_C 1.2 VDS = 10 V f = 1 kHz Common-Source Forward Transconductance vs. Drain Current 900 rDS 600 6 4 0.8 25_C 300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz 0 0 -1 -2 -3 -4 -5 2 0.4 125_C 0 0 0.01 0.1 ID - Drain Current (mA) 1 VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics 400 VGS(off) = -0.7 V 320 ID - Drain Current (A) ID - Drain Current (mA) VGS = 0 V 1.6 2 Output Characteristics VGS(off) = -1.5 V VGS = 0 V 1.2 -0.3 V 0.8 -0.6 V 0.4 -1.2 V 0 -0.9 V 240 -0.1 V 160 -0.2 V -0.3 V 80 -0.5 V 0 0 4 8 12 16 20 -0.4 V 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Output Characteristics 300 VGS(off) = -0.7 V 240 VGS = 0 V -0.1 V ID - Drain Current (A) 180 -0.2 V 120 -0.3 V 60 -0.4 V -0.5 V 0 0 0.1 0.2 0.3 0.4 0.5 0 0 0.2 ID - Drain Current (mA) 0.8 1 Output Characteristics VGS(off) = -1.5 V -0.3 V VGS = 0 V 0.6 -0.6 V 0.4 0.2 -0.9 V -1.2 V 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) www.vishay.com VDS - Drain-Source Voltage (V) Document Number: 70240 S-04028--Rev. E, 04-Jun-01 7-4 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 500 VGS(off) = -0.7 V 400 ID - Drain Current (A) ID - Drain Current (mA) VDS = 10 V 1.6 TA = -55_C 300 TA = -55_C 25_C 200 125_C 100 1.2 25_C 2 VGS(off) = -1.5 V VDS = 10 V Transfer Characteristics 0.8 0.4 125_C 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 1.5 VGS(off) = -0.7 V gfs - Forward Transconductance (mS) 1.2 VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) 3.2 4 Transconductance vs. Gate-Source Voltage VGS(off) = -1.5 V VDS = 10 V f = 1 kHz TA = -55_C 25_C 0.9 2.4 TA = -55_C 25_C 1.6 0.6 125_C 0.3 0.8 125_C 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current 200 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 10 V RL + ID rDS(on) - Drain-Source On-Resistance ( ) AV + g fs R L 2000 On-Resistance vs. Drain Current TA = 25_C 1600 VGS(off) = -0.7 V 1200 160 AV - Voltage Gain 120 80 -1.5 V 40 VGS(off) = -0.7 V 800 -1.5 V 400 0 0.01 0.1 ID - Drain Current (mA) 1 0 0.01 0.1 ID - Drain Current (mA) 1 Document Number: 70240 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-5 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 Ciss - Input Capacitance (pF) 5 f = 1 MHz 4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 6 VDS = 0 V 4 10 V 2 3 VDS = 0 V 2 1 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 3 Output Conductance vs. Drain Current 20 VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 16 en - Noise Voltage nV / Hz Equivalent Input Noise Voltage vs. Frequency VDS = 10 V gos - Output Conductance (S) 2.4 1.8 TA = -55_C 0.8 25_C 0.4 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 12 ID = 100 mA 8 ID = IDSS 4 0 10 100 1k f - Frequency (Hz) 10 k 100 k www.vishay.com 7-6 Document Number: 70240 S-04028--Rev. E, 04-Jun-01 |
Price & Availability of 2N4341
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |